Kexin Electronics NTR4501NT1G
N-Channel MOSFET
FEATURES
● VDS (V) = 20V● ID = 3.2 A (VGS = 4.5V)
● RDS(ON) < 70mΩ (VGS = 4.5V)
● RDS(ON) < 85mΩ (VGS = 2.5V)
● Leading Planar Technology for Low Gate Charge / Fast Switching
● 2.5 V Rated for Low Voltage Gate Drive +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.10.38 -0.1
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) TA=25℃ TA=85℃ Pulsed Drain Current @ tP=10us Power Dissipation (Note.1) Thermal Resistance.Junction- to-Ambient (Note.1) (Note.2) Lead Temperature for Soldering Purposes (Note.3) Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TL TJ Tstg Rating 20 ±12 3.2 2.4 10 1.25 100 300 260 150 -55 to 150 Note.1: Surface−mounted on FR4 board using