NTR4501NT1G Datasheet and Specifications PDF

The NTR4501NT1G is a N-Channel MOSFET.

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Part NumberNTR4501NT1G Datasheet
ManufacturerVBsemi
Overview NTR4501NT1G NTR4501NT1G Datasheet N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0.050 at VGS = 1.8 V ID (A)e 6a .
* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* DC/DC Converters
* Load Switch for Portable Applications ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-So.
Part NumberNTR4501NT1G Datasheet
DescriptionN-Channel MOSFET
ManufacturerCANYU
Overview NTR4501NT1G N-Channel MOSFET SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain ■ Featu.
* VDS (V) = 20V
* ID = 3.2 A (VGS = 4.5V)
* RDS(ON) < 70mΩ (VGS = 4.5V)
* RDS(ON) < 85mΩ (VGS = 2.5V)
* Leading Planar Technology for Low Gate Charge / Fast Switching
* 2.5 V Rated for Low Voltage Gate Drive +0.12.4 -0.1 0-0.1 +0.10.38 -0.1
* Absolute Maximum Ratings Ta = 25℃ Parameter Drain-So.
Part NumberNTR4501NT1G Datasheet
DescriptionN-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type N-Channel MOSFET NTR4501NT1G ■ Features ● VDS (V) = 20V ● ID = 3.2 A (VGS = 4.5V) ● RDS(ON) < 70mΩ (VGS = 4.5V) ● RDS(ON) < 85mΩ (VGS = 2.5V) ● Leading Planar Technology for Low Gate Charge.
* VDS (V) = 20V
* ID = 3.2 A (VGS = 4.5V)
* RDS(ON) < 70mΩ (VGS = 4.5V)
* RDS(ON) < 85mΩ (VGS = 2.5V)
* Leading Planar Technology for Low Gate Charge / Fast Switching
* 2.5 V Rated for Low Voltage Gate Drive +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.