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PBSS5160T - PNP Transistors

Key Features

  • s.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • High efficiency, reduces heat generation.
  • Reduces printed-circuit board area required +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 C B E 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector.

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SMD Type Transistors PNP Transistors PBSS5160T (KBSS5160T) ■ Features ● Low collector-emitter saturation voltage VCEsat ● High collector current capability: IC and ICM ● High efficiency, reduces heat generation ● Reduces printed-circuit board area required +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 C B E 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Note.1 Note.2 Collector Current - Pulse Base Current Base Current - Pulse Note.1 Collector Power Dissipation Note.2 Note.3 Note.