PBSS5160V
PBSS5160V is PNP low VCEsat (BISS) transistor manufactured by NXP Semiconductors.
description
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN plement: PBSS4160V.
1.2 Features
- -
- -
- Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
- Major application segments Automotive Tele infrastructure Industrial
- Power management DC-to-DC conversion Supply line switching
- Peripheral driver Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1]
Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance IC =
- 1 A; IB =
- 100 m A Conditions open base
[1]
Min
- Typ 220
Max
- 60
- 1
- 2 330
Unit V A A mΩ
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Free Datasheet http://../
NXP Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1, 2, 5, 6 3 4 Pinning Description collector base emitter
6 5 4 3 4 1 2 3 sym030
Simplified outline
Symbol
1, 2, 5, 6
3. Ordering information
Table 3. Ordering information Package Name PBSS5160V Description plastic surface mounted package; 6 leads Version SOT666 Type number
4. Marking
Table 4. Marking codes Marking code 51 Type number PBSS5160V
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tamb...
