Datasheet Summary
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 04
- 15 January 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4160T.
1.2 Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency due to less heat generation
- Reduces Printed-Circuit Board (PCB) area required
- Cost-effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
- Major application segments: Automotive Tele infrastructure Industrial
- Power...
