Datasheet Summary
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
23 January 2013
Product data sheet
1. General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP plement: PBSS4160PANP. NPN/NPN plement: PBSS4160PAN.
2. Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
3. Applications
- Load switch
- Battery-driven...
