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PBSS5160DS Datasheet 60v 1a PNP/pnp Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: PBSS5160DS Rev. 03 — 9 October 2008 www.DataSheet4U.com 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1. Product profile 1.

General Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4160DS.

1.2

Key Features

  • I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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