PBSS5160K Datasheet | NXP Semiconductors

60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 - 6 October 2008 .. Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package. NPN plement: PBSS4160K. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I High voltage DC-to-DC conversion High voltage MOSFET gate...