Datasheet Details
| Part number | PMEG3015EH |
|---|---|
| Manufacturer | Kexin Semiconductor |
| File Size | 856.84 KB |
| Description | Schottky Diode |
| Datasheet | PMEG3015EH-Kexin.pdf |
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Overview: SMD Type Schottky Diodes PMEG3015EH Diodes ■.
| Part number | PMEG3015EH |
|---|---|
| Manufacturer | Kexin Semiconductor |
| File Size | 856.84 KB |
| Description | Schottky Diode |
| Datasheet | PMEG3015EH-Kexin.pdf |
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1 Cathode 2 Anode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Reverse Voltage Forward Current @ Tsp≤55 °C Repetitive Peak Forward Current @ tp≤1ms;
δ≤0.25 Non-Repetitive Peak Forward Current @ tp≤8ms Power Dissipation (Note.1) (Note.2) Thermal Resistance Junction to Ambient (Note.1) (Note.2) Thermal Resistance Junction to Solder Point Junction Temperature Storage Temperature range Symbol VRM IF IFRM IFSM Pd RθJA RθJSP TJ Tstg Rating 30 1.5 4.5 9 375 830 330 150 60 150 -65 to 150 Unit V A mW ℃/W ℃ Note.1:Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Note.2:Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2 .kexin..cn 1 SMD Type Schottky Diodes PMEG3015EH ■ Electrical Characteristics Ta = 25℃ Parameter Reverse breakdown voltage Forward voltage Reverse voltage leakage current Junction capacitance Symbol Test Conditions VR IR= 100 uA IF= 1 mA IF= 10 mA IF= 100 mA VF IF= 500 mA IF= 1 A IF= 1.5 A VR= 10 V IR VR= 30 V Cj VR= 1V, f= 1MHz Note.Pulse test: tp ≤ 300 us;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| PMEG3015EH | 1.5A ULTRA LOW VFMEGA SCHOTTKY BARRIER RECTIFIERS | NXP Semiconductors | |
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PMEG3015EH | 30V 1.5A ultra low VF Schottky barrier rectifier | nexperia |
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PMEG3015EH-Q | 30V 1.5A ultra low VF Schottky barrier rectifier | nexperia |
| PMEG3015EJ | 1.5A ULTRA LOW VFMEGA SCHOTTKY BARRIER RECTIFIERS | NXP Semiconductors | |
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PMEG3015EJ | 30V 1.5A ultra low VF Schottky barrier rectifier | nexperia |
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