PXT2222A Datasheet | Kexin Semiconductor

Features - Epitaxial planar die construction - plementary to PXT2907A 1.70 0.1 0.42 0.1 0.46 0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC PC TJ Tstg 75 40 6 600 500 150 -55 to 150 V m A m W ℃ - Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Symbol VCBO VCEO VEBO ICBO Test Conditions Ic= 100 μA， IE= 0 Ic= 10 m A， IB= 0 IE= 100μA， IC= 0 VCB= 60 V , IE= 0 Min 75 40 6 Emitter cut-off current IEBO VEB= 5V , IC=0 Collector-emitter saturation voltage IC=500 m A, IB=50m A VCE(sat) IC=500 m A, IB=15m A Base - emitter saturation...