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RRH040P03 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-4 A (VGS =-10V).
  • RDS(ON) ＜ 75mΩ (VGS =-10V).
  • RDS(ON) ＜ 115mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 125mΩ (VGS =-4V) +0.04 0.21 -0.02 SOP-8 S D S D S D G D MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Avalanche energy, Single Pulse (Note.4).

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SMD Type P-Channel MOSFET RRH040P03 (KRH040P03) ■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON) ＜ 75mΩ (VGS =-10V) ● RDS(ON) ＜ 115mΩ (VGS =-4.5V) ● RDS(ON) ＜ 125mΩ (VGS =-4V) +0.04 0.21 -0.02 SOP-8 S D S D S D G D MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Avalanche energy, Single Pulse (Note.4) Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range (Note.2) (Note.3) (Note.2) (Note.3) Symbol VDS VGS ID IDM PD EAS RthJA TJ Tstg Note.1: Pw≤ 10 us, Duty cycle≤1% Note.2: Mounted on a ceramic board (30×30×0.