SD103CW Datasheet | Kexin Semiconductor

Features Low forward voltage drop. Guard ring construction for transient protection. Negligible reverse recovery time. 3.7+0.1 -0.1 0.50 0.35 Unit: mm 1.1+0.05 -0.05 0.1max +0.10.55 -0.1 +0.11.6 -0.1 +0.050.1 -0.02 Absolute Maximum Ratings Ta = 25 Parameter Peak repetitive peak reverse voltage Working peak DC blocking voltage RMS reverse voltage Forward continuous current Non-Repetitive Peak Forward Surge Curren @t 1.0s Power dissipation Thermal resistance junction to ambient Storage temperature Symbol VRRM VRWM VR VR(RMS) IFM IFRM Pd RèJA Tstg KD103AW KD103BW KD103CW 40 30 20 28 21 14 350 1.5 400 300 -65 to +125 Unit V m A A m W /W Electrical Characteristics Ta = 25 Parameter Reverse breakdown voltage Forward Voltage Drop Peak Reverse Current Total Capacitance Reverse Recovery Time KD103AW KD103BW KD103CW KD103AW KD103BW KD103CW Symbol Testconditons V (BR)R IR=100 A IF = 20m A VFM IF = 200m A VR = 30V IRM VR = 20V VR = 10V CT VR = 0V, f = 1.0MHz trr IF = IR = 200m A,Irr = 0.1 X IR, RL = 100 Min Typ Max Unit 40 30 V 20 0.37 V 5A 50 p F 10 ns Marking NO....