SI2335DS
SI2335DS is P-Channel Enhancement MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) =-12V
- ID =-4.0A (VGS =-4.5V)
- RDS(ON) ＜ 51mΩ (VGS =-4.5V)
- RDS(ON) ＜ 70mΩ (VGS =-2.5V)
- RDS(ON) ＜ 106mΩ (VGS =-1.8V)
G1
S2
3D
+0.1 2.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.1 1.3 -0.1
+0.1 0.97 -0.1
MOSFET
Unit: mm
0.1 +0.05 -0.01
1.Gate 2.Source 3.Drain
0-0.1 +0.1 0.38
-0.1
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t≤5 sec
Steady...
