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P-Channel 12-V (D-S) MOSFET
Si2335DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 12
RDS(on) (Ω) 0.051 at VGS = - 4.5 V 0.070 at VGS = - 2.5 V 0.106 at VGS = - 1.8 V
ID (A) - 4.0 - 3.5 - 3.0
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFETs: 1.8 V Rated
TO-236 (SOT-23)
G1 S2
3D
Top View Si2335DS (E5)* *Marking Code
Ordering Information: Si2335DS-T1-E3 (Lead (Pb)-free) Si2335DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 12
V
VGS
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
- 4.0 - 3.3
- 3.2 - 2.
Si2335DS Datasheet
