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SI2366DS - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 5.8 A (VGS = 10V).
  • RDS(ON) ＜ 36mΩ (VGS = 10V).
  • RDS(ON) ＜ 42mΩ (VGS = 4.5V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 D (3) 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain G (1) (2) S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current (TJ = 150℃) Tc=70℃ Ta=2.

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SMD Type MOSFET N-Channel MOSFET SI2366DS (KI2366DS) ■ Features ● VDS (V) = 30V ● ID = 5.8 A (VGS = 10V) ● RDS(ON) ＜ 36mΩ (VGS = 10V) ● RDS(ON) ＜ 42mΩ (VGS = 4.5V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 D (3) 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain G (1) (2) S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current (TJ = 150℃) Tc=70℃ Ta=25℃ Pulsed Drain Current (t=300us) Ta=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.