Si2366DS Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - 100 % Rg tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - DC/DC converters, high frequency D switching (3) - Load switch - Portable and consumer applications G (1) (2) S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SOT-23 Si2366DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 300 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous source-drain diode current TC = 25 °C TA = 25 °C TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering remendations (peak temperature) VDS VGS ID IDM IS PD TJ, Tstg THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, d t5s Maximum junction-to-foot (drain) Steady state Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 125 °C/W SYMBOL Rth JA Rth...