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SI2369DS - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-7.6A (VGS =±20V).
  • RDS(ON) ＜ 29mΩ (VGS =-10V).
  • RDS(ON) ＜ 34mΩ (VGS =-6V).
  • RDS(ON) ＜ 40mΩ (VGS =-4.5V) P-Channel MOSFET SI2369DS (KI2369DS) SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.1 2.4 -0.1 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Cont.

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SMD Type ■ Features ● VDS (V) =-30V ● ID =-7.6A (VGS =±20V) ● RDS(ON) ＜ 29mΩ (VGS =-10V) ● RDS(ON) ＜ 34mΩ (VGS =-6V) ● RDS(ON) ＜ 40mΩ (VGS =-4.5V) P-Channel MOSFET SI2369DS (KI2369DS) SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.1 2.4 -0.1 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ=150℃) Pulsed Drain Current (t=100us) Power Dissipation Thermal Resistance.Junction- to-Ambient*1*3 Thermal Resistance.