SI2369DS Datasheet | Kexin Semiconductor

Features - VDS (V) =-30V - ID =-7.6A (VGS =±20V) - RDS(ON) ＜ 29mΩ (VGS =-10V) - RDS(ON) ＜ 34mΩ (VGS =-6V) - RDS(ON) ＜ 40mΩ (VGS =-4.5V) P-Channel MOSFET SI2369DS (KI2369DS) SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 +0.1 2.4 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 - Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ=150℃) Pulsed Drain Current (t=100us) Power Dissipation Thermal Resistance.Junction- to-Ambient- 1- 3 Thermal Resistance.Junction- to-Foot Junction Temperature Junction Storage Temperature Range TC=25℃ TC=72℃ TA=25℃- 1- 2 TA=70℃ - 1- 2 TC=25℃ TC=70℃ TA=25℃- 1- 2 TA=70℃- 1- 2 t≤5S Notes: - 1.. Surface mounted on 1" x 1" FR4 board. - 2. . t = 5 s. - 3. . Maximum under steady state conditions is 166 °C/W. Symbol VDS...