Si2369DS Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - 100 % Rg tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - For mobile puting - Load switch - Notebook adaptor switch - DC/DC converter D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SOT-23 Si2369DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous source-drain diode current TC = 25 °C TA = 25 °C TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range VDS VGS ID IDM IS PD TJ, Tstg THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, d t5s Maximum junction-to-foot (drain) Steady state Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 166 °C/W SYMBOL Rth JA Rth JF TYPICAL 75 40 LIMIT -30 ± 20 -7.6...