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SI2377EDS - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) = -20V.
  • ID = -4.4 A.
  • RDS(ON) ＜ 61mΩ (VGS = -4.5V).
  • RDS(ON) ＜ 80mΩ (VGS = -2.5V).
  • RDS(ON) ＜ 110mΩ (VGS = -1.8V).
  • RDS(ON) ＜ 165mΩ (VGS = -1.5V) S +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 G R D.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃.

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SMD Type P-Channel MOSFET SI2377EDS (KI2377EDS) MOSFET ■ Features ● VDS (V) = -20V ● ID = -4.4 A ● RDS(ON) ＜ 61mΩ (VGS = -4.5V) ● RDS(ON) ＜ 80mΩ (VGS = -2.5V) ● RDS(ON) ＜ 110mΩ (VGS = -1.8V) ● RDS(ON) ＜ 165mΩ (VGS = -1.5V) S +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 G R D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current (TJ = 150℃) Tc=70℃ Ta=25℃ Pulsed Drain Current Ta=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.