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SI3437DV - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-150V.
  • ID =-1.4 A (VGS =-10V).
  • RDS(ON) ＜ 750mΩ (VGS =-10V).
  • RDS(ON) ＜ 790mΩ (VGS =-6V) G S ( SOT-23-6 ) 0.4+0.1 -0.1 6 54 1 23 +0.01 -0.01 +0.2 -0.1 D 0-0.1 +0.10.68 -0.1 +0.21.6 -0.1 +0.22.8 -0.1 +0.11.1 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1. Drain 2. Drain 3.Gate 4. Source 5. Drain 6. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150 °C) Pulsed Drain Curre.

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SMD Type P-Channel MOSFET SI3437DV (KI3437DV) ■ Features ● VDS (V) =-150V ● ID =-1.4 A (VGS =-10V) ● RDS(ON) ＜ 750mΩ (VGS =-10V) ● RDS(ON) ＜ 790mΩ (VGS =-6V) G S ( SOT-23-6 ) 0.4+0.1 -0.1 6 54 1 23 +0.01 -0.01 +0.2 -0.1 D 0-0.1 +0.10.68 -0.1 +0.21.6 -0.1 +0.22.8 -0.1 +0.11.1 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1. Drain 2. Drain 3.Gate 4. Source 5. Drain 6. Drain ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Tc = 25 °C Tc = 70 °C Ta = 25 °C (Note.