• Part: SI8822
  • Description: Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Kexin Semiconductor
  • Size: 151.60 KB
Download SI8822 Datasheet PDF
Kexin Semiconductor
SI8822
Features - VDS (V) = 20V - ID = 7A (VGS=10V) - RDS(ON) < 21mΩ (VGS = 10V) - RDS(ON) < 24mΩ (VGS = 4.5V) - RDS(ON) < 32mΩ (VGS = 2.5V) - RDS(ON) < 50mΩ (VGS = 1.8V) TSSOP-8 Unit: mm D1/D2 1 S1 2 S1 3 G1 4 8 D1/D2 7 S2 6 S2 5 G2 D1 D2 G1 G2 S1 S2 - Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage ±12 Continuous Drain Current - 1 TA=25℃ TA=70℃ Pulsed Drain Current - 2 Power Dissipation - 1 TA=25℃ TA=70℃ 1.5 PD Maximum Junction-to-Ambient...