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SI8822 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • s.
  • VDS (V) = 20V.
  • ID = 7A (VGS=10V).
  • RDS(ON) ＜ 21mΩ (VGS = 10V).
  • RDS(ON) ＜ 24mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 32mΩ (VGS = 2.5V).
  • RDS(ON) ＜ 50mΩ (VGS = 1.8V) TSSOP-8 Unit: mm D1/D2 1 S1 2 S1 3 G1 4 8 D1/D2 7 S2 6 S2 5 G2 D1 D2 G1 G2 S1 S2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current.
  • 1 TA=25℃ 7 ID TA=70℃ 5.7 Pulsed Drain Current.
  • 2 IDM 30.

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Datasheet Details

Part number SI8822
Manufacturer Kexin Semiconductor
File Size 151.60 KB
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SI8822 Datasheet

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SMD Type MOSFIECT Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 ■ Features ● VDS (V) = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V) ● RDS(ON) ＜ 50mΩ (VGS = 1.8V) TSSOP-8 Unit: mm D1/D2 1 S1 2 S1 3 G1 4 8 D1/D2 7 S2 6 S2 5 G2 D1 D2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current *1 TA=25℃ 7 ID TA=70℃ 5.7 Pulsed Drain Current *2 IDM 30 Power Dissipation *1 TA=25℃ TA=70℃ 1.5 PD 0.