Si8823EDB
FEATURES
- Trench FET® Gen III p-channel power MOSFET
- pact 0.8 mm x 0.8 mm outline area
- Low 0.4 mm max. profile
- RDS(on) rating at VGS = -1.5 V
- Typical ESD protection: 1900 V HBM
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Load switch
- Power management in batteryoperated, mobile, and wearable devices
P-Channel MOSFET D
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
MICRO FOOT Si8823EDB-T2-E1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER...
