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Si8823EDB - P-Channel 20 V (D-S) MOSFET

Key Features

  • TrenchFET® Gen III p-channel power MOSFET.
  • Compact 0.8 mm x 0.8 mm outline area.
  • Low 0.4 mm max. profile.
  • RDS(on) rating at VGS = -1.5 V.
  • Typical ESD protection: 1900 V HBM.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number Si8823EDB
Manufacturer Vishay
File Size 142.54 KB
Description P-Channel 20 V (D-S) MOSFET
Datasheet download datasheet Si8823EDB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com Si8823EDB Vishay Siliconix P-Channel 20 V (D-S) MOSFET MICRO FOOT® 0.8 x 0.8 S S2 xxxxx 3 1 0.8 mm 1 4G D Backside View Bump Side View 0.8 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V RDS(on) max. () at VGS = -1.5 V Qg typ. (nC) ID (A) Configuration -20 0.095 0.120 0.200 0.335 6.6 -2.7 a Single FEATURES • TrenchFET® Gen III p-channel power MOSFET • Compact 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile • RDS(on) rating at VGS = -1.5 V • Typical ESD protection: 1900 V HBM • Material categorization: for definitions of compliance please see www.vishay.