The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.vishay.com
Si8824EDB
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.075 at VGS = 4.5 V
0.082 at VGS = 2.5 V
20 0.090 at VGS = 1.8 V
0.125 at VGS = 1.5 V
0.175 at VGS = 1.2 V
ID (A) a 2.9 2.7 2.6 2.2 1.5
Qg (TYP.) 2.7 nC
MICRO FOOT® 0.8 x 0.8 S
S2
xxxxx 3
1 0.8 mm
1 4G D
Backside View
Bump Side View
0.8 mm
Marking Code: AM
Ordering Information: Si8824EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® power MOSFET • Ultra small 0.8 mm x 0.8 mm outline • Ultra thin 0.357 mm height • Typical ESD protection 2000 V (HBM) • Material categorization: for definitions of
compliance please see www.vishay.
Si8824EDB Datasheet
