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SI9435BDY - P-Channel Enhancement MOSFET

Key Features

  • s.
  • VDSS = -30V.
  • ID = -5.7A (VGS = -10V).
  • RDS(ON) = 42 mΩ @ VGS = -10 V.
  • RDS(ON) = 70 mΩ @ VGS = -4.5 V SOP-8 1.50 0.15 +0.04 0.21 -0.02 S G D P-Channel MOSFET S1 S2 S3 G4 8D 7D 6D 5D.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Case Junction Temperature Storage Temperat.

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SMD Type MOSFIECT P-Channel Enhancement MOSFET SI9435BDY (KI9435BDY) ■ Features ● VDSS = -30V ● ID = -5.7A (VGS = -10V) ● RDS(ON) = 42 mΩ @ VGS = -10 V ● RDS(ON) = 70 mΩ @ VGS = -4.5 V SOP-8 1.50 0.15 +0.04 0.21 -0.02 S G D P-Channel MOSFET S1 S2 S3 G4 8D 7D 6D 5D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range TA=25℃ *1 TA=70℃ *2 *1 50℃/W when mounted on a 1 in2 pad of 2 oz copper *2 105℃/W when mounted on a .04 pad of 2 oz copper Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Rating -30 ±20 -5.7 -4.6 -30 2.5 1.