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SI9435BDY - P-Channel 30-V (D-S) MOSFET

Features

  • ID (A).
  • 5.7.
  • 5.0.
  • 4.4 D TrenchFETr Power MOSFET S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si9435BDY Si9435BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D G D P-Channel MOSFET.

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Datasheet Details

Part number SI9435BDY
Manufacturer Vishay Siliconix
File Size 178.19 KB
Description P-Channel 30-V (D-S) MOSFET
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Full PDF Text Transcription

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Si9435BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.042 @ VGS = −10 V −30 0.055 @ VGS = −6 V 0.070 @ VGS = −4.5 V FEATURES ID (A) −5.7 −5.0 −4.4 D TrenchFETr Power MOSFET S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si9435BDY Si9435BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "20 Unit V −5.7 −4.6 −30 −2.3 2.
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