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SI9435DY - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-5.3 A (VGS =-10V).
  • RDS(ON) < 50mΩ (VGS =-10V).
  • RDS(ON) < 80mΩ (VGS =-4.5V).
  • Fast switching speed 5 4 6 3 7 2 8 1 +0.04 0.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation (Note.1) (Note.2) (Note.3) Symbol VDS VGS ID IDM PD Thermal Resist.

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SMD Type P-Channel MOSFET SI9435DY MOSFET ■ Features ● VDS (V) =-30V ● ID =-5.3 A (VGS =-10V) ● RDS(ON) < 50mΩ (VGS =-10V) ● RDS(ON) < 80mΩ (VGS =-4.5V) ● Fast switching speed 5 4 6 3 7 2 8 1 +0.04 0.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation (Note.1) (Note.2) (Note.3) Symbol VDS VGS ID IDM PD Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range RthJA RthJC TJ Tstg Note.1: 50°C/W when mounted on a 1in 2 pad of 2 oz copper Note.2: 105°C/W when mounted on a .04 in2 pad of 2 oz copper Note.