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SIS2305PLT1G - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) = -8V.
  • RDS(ON)＜0.052 Ω (VGS = -4.5V).
  • RDS(ON)＜0.071 Ω (VGS = -2.5V).
  • RDS(ON)＜0.108 Ω (VGS = -1.8V) D G S +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-source voltage Gate-source voltage Continuous drain current -- Pulsed drain current TA=25℃ TA=70.

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SMD Type P-Channel MOSFET SIS2305PLT1G MOSFET ■ Features ● VDS (V) = -8V ● RDS(ON)＜0.052 Ω (VGS = -4.5V) ● RDS(ON)＜0.071 Ω (VGS = -2.5V) ● RDS(ON)＜0.108 Ω (VGS = -1.8V) D G S +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-source voltage Gate-source voltage Continuous drain current -- Pulsed drain current TA=25℃ TA=70℃ Power dissipation -- TA=25℃ TA=70℃ Thermal Resistance.Junction-to-Ambient Operating junction and storage temperature range Symbol VDS VGS ID IDM PD RθJA Tj,Tstg Rating -8 ±8 -3.5 -2.8 -12 1.25 0.8 130 -55 to +150 Unit V V A A W ℃/W ℃ www.kexin.com.