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WNM2016 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) =20 V.
  • ID = 3.2 A.
  • RDS(ON) < 47m Ω @ VGS = 4.5 V.
  • RDS(ON) < 55m Ω @ VGS = 2.5 V.
  • RDS(ON) < 66m Ω @ VGS = 1.8 V D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit : mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 G S.
  • Absolute Maximum Ratings TA = 25℃ unless otherwise noted Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 20 G.

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SMD Type TraMnOsiSsFtoErsT N-Channel MOSFET WNM2016 ■ Features ● VDS (V) =20 V ● ID = 3.2 A ● RDS(ON) < 47m Ω @ VGS = 4.5 V ● RDS(ON) < 55m Ω @ VGS = 2.5 V ● RDS(ON) < 66m Ω @ VGS = 1.8 V D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit : mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 G S ■ Absolute Maximum Ratings TA = 25℃ unless otherwise noted Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C) a TA=25℃ ID TA=70℃ 3.2 2.9 2.5 2.3 Maximum Power Dissipation a TA=25℃ 0.8 0.7 PD TA=70℃ 0.5 0.4 Continuous Drain Current (TJ = 150 °C) b TA=25℃ ID TA=70℃ 2.9 2.7 2.3 2.