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WNM2016 - N-Channel MOSFET

General Description

The WNM2016 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion and power switch applications.

Key Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 SOT-23 D 3 12 GS Configuration (Top View) 3 WT6.
  • 12 WT6.
  • = Device Code = Month (A~Z) Marking.

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Datasheet Details

Part number WNM2016
Manufacturer Will Semiconductor
File Size 100.35 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM2016 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM2016 N-Channel, 20V, 3.2A, Power MOSFET WNM2016 Http://www.willsemi.com V(BR)DSS 20 Rds(on) 40 @ 4.5V 47 @ 2.5V 55 @ 1.8V Descriptions The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM2016 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 SOT-23 D 3 12 GS Configuration (Top View) 3 WT6* 12 WT6 * = Device Code = Month (A~Z) Marking Applications z Driver for Relay, Solenoid, Motor, LED etc.