WNM2016 Description
WNM2016 N-Channel, 20V, 3.2A, Power MOSFET WNM2016 Http://.willsemi. V(BR)DSS 20 Rds(on) 40 @ 4.5V 47 @ 2.5V 55 @ 1.8V Descriptions The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
WNM2016 Key Features
- = Device Code = Month (A~Z) Marking