Kexin Electronics WNM2020
N-Channel MOSFET
FEATURES
● VDS (V) = 20V● ID = 0.83 A
● RDS(ON) < 310mΩ (VGS = 4.5V)
● RDS(ON) < 360mΩ (VGS = 2.5V)
● RDS(ON) < 460mΩ (VGS = 1.8V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 D 3 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 1 2 G S
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Ta=25℃ Ta=70℃ Power Dissipation (Note.1) Continuous Drain Current (Note.2) Power Dissipation (Note.2) Pulsed Drain Current (Note.3) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Ta=25℃ Ta=70℃ Ta=25℃ Ta=70℃ Ta=25℃ Ta=70℃ (Note.1) (Note.2) Symbol VDS VGS ID PD ID PD IDM RthJA RthJC TJ Tstg 10 S Steady State 20 ±6 0.9 0.83 0.72 0.66 0.38 0.32 0.24 0.2 0.79 0.71 0.63 0.57 0.29 0.24 0.19 0.15 1.4 325 385 420 520 - 300 150 -55 to 150 Note.1:Surface mounted on FR4...