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WNM2020 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID = 0.83 A.
  • RDS(ON) ＜ 310mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 360mΩ (VGS = 2.5V).
  • RDS(ON) ＜ 460mΩ (VGS = 1.8V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 D 3 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 1 2 G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1).

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SMD Type MOSFET N-Channel MOSFET WNM2020 ■ Features ● VDS (V) = 20V ● ID = 0.83 A ● RDS(ON) ＜ 310mΩ (VGS = 4.5V) ● RDS(ON) ＜ 360mΩ (VGS = 2.5V) ● RDS(ON) ＜ 460mΩ (VGS = 1.8V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 D 3 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 1 2 G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Ta=25℃ Ta=70℃ Power Dissipation (Note.1) Continuous Drain Current (Note.2) Power Dissipation (Note.2) Pulsed Drain Current (Note.3) Thermal Resistance.Junction- to-Ambient Thermal Resistance.