Datasheet4U Logo Datasheet4U.com

WNM2020 - N-Channel MOSFET

General Description

The WNM2020 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

Key Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-23.

📥 Download Datasheet

Datasheet Details

Part number WNM2020
Manufacturer Will Semiconductor
File Size 188.60 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM2020 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WNM2020 N-Channel MOSFET TY Semiconductor
WNM2020 N-Channel 20V MOSFET VBsemi
WNM2020 N-Channel MOSFET Kexin
WNM2020-3 N-Channel MOSFET VBsemi
WNM2023 N-Channel MOSFET TY Semiconductor

Other Datasheets by Will Semiconductor

Part Number Description
WNM2021 N-Channel MOSFET
WNM2024 N-Channel MOSFET
WNM2029 N-Channel MOSFET
WNM2016 N-Channel MOSFET
WNM2030 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V WNM2020 Http//:www.willsemi.com Descriptions SOT-23 The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNM2020 is Pb-free.