Kexin Electronics XP161
N-Channel Power MOSFET
FEATURES
● Low on-state resistance : Rds (on) = 0.055Ω ( Vgs = 4.5V ) Rds (on) = 0.095Ω ( Vgs = 2.5V ) Rds (on) = 0.20Ω ( Vgs = 1.5V )● Ultra high-speed switching
● Gate protect diode built-in
● Driving Voltage : 1.5V SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.1 2.50 -0.1 +0.1 4.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.1 0.80 -0.1 +0.1 2.60 -0.1 3.00+0.1 -0.1 +0.1 0.40 -0.1 1 Gate 11.. SBoauserce 2 Drain 22.. DCroallienctor 333.. GSEmaotuieitrtcere
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ 1 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) Power dissipation * Channel temperature Storage temperature * When implemented on a ceramic PCB●