XP162A11 Datasheet | Kexin Semiconductor

Features - VDS (V) =-30V - ID =-2.5 A (VGS =-10V) - RDS(ON) ＜ 150mΩ (VGS =-10V) - RDS(ON) ＜ 280mΩ (VGS =-4.5V) 1.70 0.1 0.42 0.1 0.46 0.1 MOSFET Unit:mm 1.Gate 2.Drain 3.Source - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Reverse Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM IDR PD Rth JA TJ Tstg Rating -30 ±20 -2.5 -10 -2.5 2 62.5 150 -55 to 150 Unit V W ℃/W ℃ .kexin..cn 1 SMD Type P-Channel MOSFET XP162A11 - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Cut-off Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(off) RDS(On) g FS Ciss Coss Crss td(on) tr td(off) tf VSD Test Conditions ID=-250μA, VGS=0V VDS=-30V, VGS=0V VDS=0V, VGS=±20V VGS=-10V, ID=-1m A VGS=-10V, ID=-1.5A VGS=-4.5V, ID=-1.5A VDS=-10V, ID=-1.5A VGS=0V, VDS=-10V, f=1MHz VGS=-5V, VDS=-10V, ID=-1.5A IS=-2.5A,VGS=0V MOSFET Min Typ Max...