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XP162A11 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-2.5 A (VGS =-10V).
  • RDS(ON) ＜ 150mΩ (VGS =-10V).
  • RDS(ON) ＜ 280mΩ (VGS =-4.5V) 1.70 0.1 0.42 0.1 0.46 0.1 MOSFET Unit:mm 1.Gate 2.Drain 3.Source G D S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Reverse Drain Current Power Dissipation Thermal Resistance. Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM IDR.

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SMD Type P-Channel MOSFET XP162A11 SOT-89 ■ Features ● VDS (V) =-30V ● ID =-2.5 A (VGS =-10V) ● RDS(ON) ＜ 150mΩ (VGS =-10V) ● RDS(ON) ＜ 280mΩ (VGS =-4.5V) 1.70 0.1 0.42 0.1 0.46 0.1 MOSFET Unit:mm 1.Gate 2.Drain 3.Source G D S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Reverse Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM IDR PD RthJA TJ Tstg Rating -30 ±20 -2.5 -10 -2.5 2 62.5 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.