Kexin Electronics XP162A11
P-Channel MOSFET
FEATURES
● VDS (V) =-30V● ID =-2.5 A (VGS =-10V)
● RDS(ON) < 150mΩ (VGS =-10V)
● RDS(ON) < 280mΩ (VGS =-4.5V) 1.70 0.1 0.42 0.1 0.46 0.1 MOSFET Unit:mm 1.Gate 2.Drain 3.Source G D S
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Reverse Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM IDR PD RthJA TJ Tstg Rating -30 ±20 -2.5 -10 -2.5 2 62.5 150 -55 to 150 Unit V A W ℃/W ℃ 1 SMD Type P-Channel MOSFET XP162A11●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Cut-off Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Diode Forward Voltage Symbol VDSS IDSS IGSS...