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XP162A11C0PR-G - Power MOSFET

General Description

The XP162A11C0PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

Key Features

  • On-State Resistance : Rds(on)=0.15Ω@Vgs=-10V : Rds(on)=0.28Ω@Vgs=-4.5V Ultra High-Speed Switching Driving Voltage : -4.5V Gate Protect Diode Built-in P-Channel Power MOSFET DMOS Structure Package : SOT-89.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XP162A11C0PR-G Power MOSFET ETR11025-004 ■GENERAL DESCRIPTION The XP162A11C0PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. 21 1x ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■PIN CONFIGURATION/ MARKING G：Gate S：Source D：Drain ■FEATURES Low On-State Resistance : Rds(on)=0.15Ω@Vgs=-10V : Rds(on)=0.28Ω@Vgs=-4.5V Ultra High-Speed Switching Driving Voltage : -4.