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XP161A11A1PR - Power MOS FET

General Description

The XP161A11A1PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

Key Features

  • Low on-state resistance: Rds(on)=0.065Ω(Vgs=10V) Rds(on)=0.105Ω(Vgs=4.5V) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage: 4.5V High density mounting: SOT-89 u s Pin Configuration s Pin Assignment PIN NUMBER 1 2 3 1 G 2 D 3 S PIN NAME G D S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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x N-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.105Ω MAX x Gate Protect Diode Built-in x Ultra High-Speed Switching x SOT-89 Package s General Description The XP161A11A1PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible. s Applications q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s Features Low on-state resistance: Rds(on)=0.065Ω(Vgs=10V) Rds(on)=0.105Ω(Vgs=4.5V) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage: 4.