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XP161A11A1PR-G - Power MOSFET

General Description

The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

Key Features

  • Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V : Rds(on)=0.105Ω@ Vgs=4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-89 Environmentally Friendly : EU RoHS Compliant, Pb Free 11 1x.
  • PIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XP161A11A1PR-G Power MOSFET ETR1122_003 ■GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V : Rds(on)=0.105Ω@ Vgs=4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.