Datasheet Summary
Power MOSFET
ETR1122_003
- GENERAL DESCRIPTION
The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.
- APPLICATIONS
- Notebook PCs
- Cellular and portable phones
- On-board power supplies
- Li-ion battery systems
- Features
Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V
: Rds(on)=0.105Ω@ Vgs=4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channel...
