• Part: XP162A11C0PR
  • Description: Power MOS FET
  • Manufacturer: Torex Semiconductor
  • Size: 52.86 KB
Download XP162A11C0PR Datasheet PDF
Torex Semiconductor
XP162A11C0PR
XP162A11C0PR is Power MOS FET manufactured by Torex Semiconductor.
Description The XP162A11COPR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.15 Ω ( Vgs = -10V ) Rds (on) = 0.28 Ω ( Vgs = -4.5V ) Ultra high-speed switching Operational Voltage : -4.5V Gate protect diode built-in High density mounting : SOT - 89 Pin Configuration Pin Assignment PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source u 1 G 2 D 3 S - 89 Top View Equivalent Circuit Absolute Maximum Ratings Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -30 + 20 -2.5 -10 -2.5 2 150 -55 to 150 UNITS V V A A A W - Channel MOS FET ( 1 device built-in ) Channel Temperature Storage Temperature ( note ) : When implemented on a ceramic PCB Electrical Characteristics DC characteristics Ta=25 ° C PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 30 , Vgs = 0V Vgs = ± 20 , Vds = 0V Id = -1m A , Vds = - 10V Id = - 1.5A , Vgs = - 10V Id = - 1.5A , Vgs = - 4.5V Id = - 1.5A , Vds = - 10V If = - 2.5A , Vgs = 0V - 1.0 0.11 0.2 2.5 - 0.85 - 1.1 MIN TYP MAX - 10 ±...