XP162A11C0PR
XP162A11C0PR is Power MOS FET manufactured by Torex Semiconductor.
Description
The XP162A11COPR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible.
Features
Low on-state resistance : Rds (on) = 0.15 Ω ( Vgs = -10V ) Rds (on) = 0.28 Ω ( Vgs = -4.5V ) Ultra high-speed switching Operational Voltage : -4.5V Gate protect diode built-in High density mounting : SOT
- 89
Pin Configuration
Pin Assignment
PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source u
1 G
2 D
3 S
- 89 Top View
Equivalent Circuit
Absolute Maximum Ratings
Ta=25 OC PARAMETER Drain
- Source Voltage Gate
- Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -30 + 20 -2.5 -10 -2.5 2 150 -55 to 150 UNITS V V A A A W
- Channel MOS FET ( 1 device built-in )
Channel Temperature Storage Temperature
( note ) : When implemented on a ceramic PCB
Electrical Characteristics
DC characteristics
Ta=25 ° C PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds =
- 30 , Vgs = 0V Vgs = ± 20 , Vds = 0V Id = -1m A , Vds =
- 10V Id =
- 1.5A , Vgs =
- 10V Id =
- 1.5A , Vgs =
- 4.5V Id =
- 1.5A , Vds =
- 10V If =
- 2.5A , Vgs = 0V
- 1.0 0.11 0.2 2.5
- 0.85
- 1.1 MIN TYP MAX
- 10 ±...