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KP-2012SF4C - INFRARED EMITTING DIODE

General Description

SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes.

Notes: 1.

All dimensions are in millimeters (inches).

Key Features

  • z 2.0mmx1.25mm SMT LED,1.1mm thickness. z Mechanically and spectrally matched to the phototransistor. z Package: 2000pcs / reel. z Moisture sensitivity level : level 3. z RoHS compliant.

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Datasheet Details

Part number KP-2012SF4C
Manufacturer Kingbright
File Size 223.25 KB
Description INFRARED EMITTING DIODE
Datasheet download datasheet KP-2012SF4C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2.0x1.25mm INFRARED EMITTING DIODE Part Number: KP-2012SF4C Features z 2.0mmx1.25mm SMT LED,1.1mm thickness. z Mechanically and spectrally matched to the phototransistor. z Package: 2000pcs / reel. z Moisture sensitivity level : level 3. z RoHS compliant. Description SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. KingbrightPackage Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. SPEC NO: DSAB1069 APPROVED: WYNEC REV NO: V.