KVR1333D3D8R9S-4GHB - 4GB 512M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM

Datasheet Summary

Description

This document describes ValueRAM’s 512M x 72-bit (4GB) DDR3-1333MHz CL9 SDRAM (Synchronous DRAM) registered w/parity, dual-rank memory module, based on eighteen 256M x 8-bit DDR3-1333MHz FBGA components.

The SPD is programmed to JEDEC standard latency 1333MHz timing of 9-9-9 at 1.5V.

Features

JEDEC standard 1.5V ± 0.075V Power Supply.
VDDQ = 1.5V ± 0.075V.
667MHz fCK for 1333Mb/sec/pin.
8 independent internal bank.
Programmable CAS Latency: 6,7,8,9,10.
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock.
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333).
8-bit pre-fetch.
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which do.

Kingston

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Datasheet Details

Part number	KVR1333D3D8R9S-4GHB
Manufacturer	Kingston
File Size	266.40 KB
Description	4GB 512M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM
Datasheet	KVR1333D3D8R9S-4GHB Datasheet
Additional preview pages of the KVR1333D3D8R9S-4GHB datasheet.

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Memory Module Specifications KVR1333D3D8R9S/4GHB 4GB 512M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION This document describes ValueRAM’s 512M x 72-bit (4GB) DDR3-1333MHz CL9 SDRAM (Synchronous DRAM) registered w/parity, dual-rank memory module, based on eighteen 256M x 8-bit DDR3-1333MHz FBGA components. The SPD is programmed to JEDEC standard latency 1333MHz timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers and requires +1.5V. The electrical and mechanical specifications are as follows: DRAM Supported: Hynix B-Die SPECIFICATIONS CL(IDD) Row Cycle Time (tRCmin) Refresh to Active/Refresh Command Time (tRFCmin) Row Active Time (tRASmin) Power UL Rating Operating Temperature Storage Temperature 9 cycles 49.5ns (min.) 160ns (min.

Published: Oct 23, 2014 |