HJR4102E Overview
Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View (1) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 100A TC = 125ºC Id = 100A GATE CHARGE 10 ID = 100A VDS = 30V 8 12 RDS(on) - On-State Resistance (mΩ) 10 8 6 4 2 0 6 4 2 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 0 0 5 10 15 20 25 30 35 Qg - Gate Charge (nC) 40 45 50 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers the.
