Datasheet Details
| Part number | HJR4102E |
|---|---|
| Manufacturer | Koloona Industries |
| File Size | 1.06 MB |
| Description | Sub-miniature PCB Relay |
| Datasheet | HJR4102E-KoloonaIndustries.pdf |
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Overview: CSD18532KCS .ti. SLPS361A – AUGUST 2012 – REVISED OCTOBER 2012 60-V, N-Channel NexFET™ Power MOSFETs Check for Samples:.
| Part number | HJR4102E |
|---|---|
| Manufacturer | Koloona Industries |
| File Size | 1.06 MB |
| Description | Sub-miniature PCB Relay |
| Datasheet | HJR4102E-KoloonaIndustries.pdf |
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The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Figure 1.
Top View (1) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 100A TC = 125ºC Id = 100A GATE CHARGE 10 ID = 100A VDS = 30V 8 12 RDS(on) - On-State Resistance (mΩ) 10 8 6 4 2 0 6 4 2 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 0 0 5 10 15 20 25 30 35 Qg - Gate Charge (nC) 40 45 50 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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HJR4102E | Relays | NINGBO TIANBO GANGLIAN ELECTRONICS |
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HJR4102 | Relays | NINGBO TIANBO GANGLIAN ELECTRONICS |
| Part Number | Description |
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