| Part Number | HJR4102E Datasheet |
|---|---|
| Manufacturer | NINGBO TIANBO GANGLIAN ELECTRONICS |
| Overview | The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S 1 8 D IDM PD TJ, TSTG EAS S 2 7 D S 3 D 6 D G 4 5 D P0093-01 (1) Typical RθJA =. Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistanc. |
HJR4102E Datasheet and Specifications PDF
The HJR4102E is a Relays.
| Part Number | HJR4102E Datasheet |
|---|---|
| Description | Sub-miniature PCB Relay |
| Manufacturer | Koloona Industries |
| Overview | The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View (1) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS VGS - Gate-to-Source Voltag. Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resist. |