KRC112M
FEATURES
ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT C
R1 B
KRC110M~KRC114M
EPITAXIAL PLANAR PNP TRANSISTOR
1 2 3N L
1. EMITTER 2. COLLECTOR 3. BASE
O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27
F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45
L 25 M 0.80 N 0.55 MAX
O 0.75
TO-92M
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
RATING 50 50 5 100 400 150
-55ᴕ150
UNIT V V V m A m W ᴱ ᴱ
1998. 7. 8
Revision No : 3
1/4
KRC110M~KRC114M
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency
KRC110M
ICBO IEBO h FE VCE(sat) f T
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