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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRC660E~KRC664E
EPITAXIAL PLANAR NPN TRANSISTOR
B
FEATURES
With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.
A1 A C
B1
Simplify Circuit Design.
1
5
DIM A
A1 B
2
3
4
EQUIVALENT CIRCUIT
C B R1
EQUIVALENT CIRCUIT (TOP VIEW)
5 4
H
P P
B1 C D H J P
MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+
0.50 _ 0.05 0.2 + _ 0.05 0.5 +
C
D
_ 0.05 0.12 + 5
Q1
Q2
E
1
2
3
1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5.
KRC660E Datasheet
