KRC662E
FEATURES
With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.
A1 A C
B1
Simplify Circuit Design.
DIM A
A1 B
EQUIVALENT CIRCUIT
C B R1
EQUIVALENT CIRCUIT (TOP VIEW)
5 4
B1 C D H J P
MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+
0.50 _ 0.05 0.2 + _ 0.05 0.5 +
_ 0.05 0.12 + 5
Q1
Q2
1. Q 1 IN (BASE) 2. Q 1, Q 2 MON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR)
TESV
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
SYMBOL VCBO VCEO VEBO IC RATING 50 50 5 100 UNIT V V V m A CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range
- Total Rating. SYMBOL PC
- Tj Tstg RATING 200 150 -55 150 UNIT m W
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter...
