KRC662U
FEATURES
With Built-in Bias Resistors.
A1
KRC660U~KRC664U
EPITAXIAL PLANAR NPN TRANSISTOR
B B1 1 5
Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.
2 3 4 D
DIM A A1 B
B1 C D G H
MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 +
0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05
EQUIVALENT CIRCUIT
C B R1
EQUIVALENT CIRCUIT (TOP VIEW)
Q1
Q2
1. Q 1 IN (BASE) 2. Q 1, Q 2 MON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR)
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
SYMBOL VCBO VCEO VEBO IC RATING 50 50 5 100 UNIT V V V m A CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range
- Total Rating. SYMBOL PC
- Tj Tstg RATING 200 150 -55 150 UNIT m W
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter...
