Datasheet Summary
LMN0910P 100V N-Channel MOSFET
Rev. 1.0
Features
- 100V,2A, RDS(ON) =200mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS guaranteed
- Green Device Available
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Applications
- Notebook
- Load Switch
- LED applications
Pin Configuration LMN0910PJZF (SOT-23)
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