LMN0910P Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. Applications Notebook Load Switch LED applications LMN0910PJZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain...
LMN0910P Key Features
- 100V,2A, RDS(ON) =200mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS guaranteed
- Green Device Available