LMN1072KJZF Overview
LMN1072KJZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Applications Power Management in Notebook Portable Equipment Battery Powered System DC/DC...
LMN1072KJZF Key Features
- 20V/0.5A, RDS(ON)=300mΩ@VGS=4.5V
- 20V/0.4A, RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.2A, RDS(ON)=700mΩ@VGS=1.8V
- 20V/0.1A, RDS(ON)=1200mΩ@VGS=1.5V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protected
- SOT-23 package design
LMN1072KJZF Applications
- Power Management in Notebook