Datasheet Summary
Rev. 1.0
LMN1072KJZF 20V N-Channel Enhancement Mode MOSFET
Features
- 20V/0.5A, RDS(ON)=300mΩ@VGS=4.5V
- 20V/0.4A, RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.2A, RDS(ON)=700mΩ@VGS=1.8V
- 20V/0.1A, RDS(ON)=1200mΩ@VGS=1.5V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protected
- SOT-23 package design
Product Description
LMN1072KJZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial...