LGE 2SA720
Bipolar Transistors
FEATURES
For low-frequency power amplification and driver amplificationMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage 2SA719 2SA720 VCEO Collector-Emitter Voltage 2SA719 2SA720 VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Value -30 -60 -25 -50 -5 -500 625 150 -55-150 Units V V V mA mW ℃ ℃ Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage 2SA719 2SA720 Collector-emitter breakdown voltage 2SA719 2SA720 Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) Tran