SeCoS Halbleitertechnologie GmbH 2SA720
PNP Transistor
FEATURES
● For low-frequency power amplification and driver amplification. G H CLASSIFICATION OF hFE Product-Rank 2SA720-Q 2SA720-R Range 85~170 120~240 2SA720-S 170~340 J AD B K E CF TO-92 Emitter Collector●Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76
● Base
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG -60 -50 -5 -0.5 625 150, -55~150 Collector Emitter Unit V V V A mW °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise s