LGE 2SB1370
PNP Transistors
| Part No. | 2SB1370 |
|---|---|
| Datasheet | 2SB1370 Download |
| Manufacturer |  LGE |
| Description | PNP Transistors |
| Buy | Stock & Price |
FEATURES
Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipation PCM : 2 W (Tamb=25℃) 30 W (Tcase=25℃)MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous TJ Junction temperature Tstg Storage temperature Dimensions in inches and (millimeters) Value -60 -60 -5 -3 150 -55-150 Units V V V A ℃ ℃ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA, IE=0 -60 V Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CEO IC=-1mA, IB=0 V(BR)EBO IE=-50μA, IC=0 ICBO VCB=-60V, IE=0 IEBO VEB=-4V, IC=0 -60 V -5 V -10 μA -10 μA DC current gain hFE * VCE=-5V, IC=-500mA 100 320 Collector-emitter saturation voltage VCE(sat) * IC=-2A, IB=-0.2A -1.5 V B...